Large modal volume semiconductor laser system with spatial mode filter

ABSTRACT

A semiconductor optical amplification system that uses a single-mode fiber angle-coupled to a semiconductor wave-guide medium with optical gain. This design is particularly simple and relevant to optical fiber systems, but it may be generalized to include other implementations as well, in which other spatial mode filters are employed. A chip design is employed in which lowest order mode has a size greater than about 5 micrometers (μm). Thus, much smaller facet angles can be employed while still avoiding self-oscillation. More specifically, according to some aspects of the invention, facet angles of less than 4 to 5 degrees are utilized.

RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.10/055,872 filed on Jan. 23, 2002 now U.S. Pat. No. 6,804,281 whichclaims benefit of provisional application No. 60/263,683 filed on Jan.23, 2001, both of which are incorporated herein by reference in theirentirety.

BACKGROUND OF THE INVENTION

Conventional edge-emitting semiconductor devices such as lasers andsemiconductor optical amplifiers (SOA's) usually comprise a substrate,on which epitaxial layers of varying alloy compositions, carrier typesand carrier densities have grown. These various layers are used todefine the optical waveguide and the gain region of the device, whichare designed to support amplification and emission of radiation in asingle spatial mode. Typically, for high power devices, the dimensionsof the cross-sectional area of the single spatial mode are a fewmicrometers in the direction parallel to the epitaxial layers (thelateral direction) and a fraction of a micrometer perpendicular to thoselayers (the transverse direction).

SUMMARY OF THE INVENTION

For many applications, it would be useful if the dimensions of the modecould be made larger in both the lateral and transverse directions, andparticularly in the transverse direction. Larger dimensions would leadto a reduction in the numerical aperture of the output beam, and thebeam could be more nearly round, rather than being elliptical incross-section with a large aspect ratio of the major to minor axes.These larger mode sizes and shapes would be especially attractive whenthe optical output of the semiconductor device is to be coupled into asingle-mode optical fiber.

The disjunction between the mode size of a typical semiconductor laserand the mode size in the optical fiber necessitates coupling optics,such as discrete lenses and fiber lenses, to expand the mode whencoupling from a semiconductor laser to fiber, or shrink the mode whencoupling from fiber to the semiconductor laser or SOA.

Fundamentally, the achievement of a larger mode size in a waveguide thatsupports only a lowest-order, single spatial mode is a design dilemma.For a symmetric 2-dimensional slab wave-guide, single-spatial-modepropagation can occur only if the following inequality is satisfied:(Δn)n<0.5(λ/W)²,  Eq. 1.1

where n is the index of the slab, W is its width, λ is the free-spacewavelength, and Δn is the difference between the slab index and itscladding index.

If the mode dimension W is on the order of 5 to 10 micrometers, as isfound in common single mode fiber, then Δn (assuming that λ˜1 micrometerand n˜3.5) must be less than about 0.006. Such small index differencesare nearly impossible to obtain accurately by choosing different alloycompositions, because variations in temperature, carrier density, orgain and loss can easily cause larger changes in the effective value ofthe index, or overwhelm the real index differential via gain guiding(imaginary part of the index differential).

In three-dimensional waveguides, the geometry is generally morecomplicated and a simple relation such as Eq. 1.1 cannot be universallyobtained. Nonetheless, it is approximately true that, for a symmetric,more or less rectangular wave-guide geometry, a relationship similar toEq. 1.1 applies independently for each of the lateral and transversedirections with characteristic waveguide dimensions W_(L) and W_(T) andwith suitably defined index differentials Δn_(L) and Δn_(T). (Moreprecisely, Eq. 1.1 holds when the wave-guide is symmetric in bothdirections and the wave equation is separable in the two variables).

Very small index differentials can be obtained in the lateral directionusing a stripe waveguide structure, such as a ridge waveguide, where theindex differential is determined by an effective index approximation.This mathematical approximation is the consequence of a geometricstructure that is achieved by constructing a lateral stripe (usually byetching grooves or entirely removing material on either lateral side ofthe stripe that extends on the optical axis of the device) into aheterostructure of stacked layers of varying index. In this manner, itis possible to produce sufficiently small, controllable indexdifferentials so that truly single spatial mode operation in the lateraldirection can be obtained for mode widths up to 2 to 4 micrometers.

In the transverse direction, however, the index variations are tied toband gap variations that must have minimal differentials to achieveappropriate carrier confinement within the gain region of the structure.Some have proposed designs that have modal widths up to about 2micrometers in the transverse direction—if the gain region is positionednear the null of the next higher mode, the structure can effectivelysupport only the lowest order spatial mode. The next mode, though aproper mode of the structure, has very low gain. With this strategy, theright-hand side of Eq. 1.1 may be multiplied by an additional factor of2², to allow for the next propagating (but low-gain) mode. Then for a2-micrometer transverse width, the maximum index differential can be aslarge as about 0.1, a value compatible with adequate carrierconfinement.

Nonetheless, even with these efforts, mode size matching between thesingle mode fiber and the edge-emitting stripe waveguide semiconductorchip is still suboptimal.

In order to go beyond the limitations of conventional structures, asdescribed above, it is necessary to use modified waveguides that supporta few higher-order spatial modes, or may even be highly overmodedwaveguides. The flexibility, afforded by this approach, in the geometryof the waveguide structure allows for better optimization of the modeshape and can yield less critical dimensional control.

The present invention concerns a design that uses a single-mode fiberangle-coupled to a semiconductor wave-guide medium with optical gain.This design is particularly simple and relevant to optical fibersystems, but it may be generalized to include other implementations aswell, in which other single-mode filters are employed. A corerealization behind the invention surrounds the fact that external cavitysystems with tilted facet semiconductor active devices are generallythought to be impracticable because large facet angles, i.e., greaterthan 7 degrees, are required to prevent self-oscillation between thefacets of the semiconductor waveguide medium. At such angles, theresulting coupling efficiency is usually unacceptably low. However, whenchip designs are utilized that support lowest order modes of sizesgreater than about 5 micrometers (μm), much smaller facet angles can beemployed while still avoiding self-oscillation. More specifically,according to some aspects of the invention, facet angles of less than4–5 degrees are utilized.

The present invention utilizes a much larger mode size thereby reducingthe angle required to avoid self-oscillation. This small angle incombination with the large mode size yields high coupling efficiency(i.e, greater than 80%) without intervening optics such as microopticsor fiber lenses. As a result, efficient laser operation is achieved withthe single mode fiber providing intracavity spatial mode filtering,which ensures that the laser power is carried predominantly in the largemode of the semiconductor waveguide.

The above and other features of the invention including various noveldetails of construction and combinations of parts, and other advantages,will now be more particularly described with reference to theaccompanying drawings and pointed out in the claims. It will beunderstood that the particular method and device embodying the inventionare shown by way of illustration and not as a limitation of theinvention. The principles and features of this invention may be employedin various and numerous embodiments without departing from the scope ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings, reference characters refer to the sameparts throughout the different views. The drawings are not necessarilyto scale; emphasis has instead been placed upon illustrating theprinciples of the invention. Of the drawings:

FIG. 1 is a schematic cross-sectional view of an external cavitysemiconductor laser system, according to the present invention, havingdouble-ended spatial mode filtering;

FIG. 2 is a schematic cross-sectional view of a semiconductor opticalamplifier chip according to an embodiment of the present invention;

FIG. 3 is a plot of coupling efficiency of the lowest-order mode C₁₁ asa function of fiber mode diameter;

FIGS. 4 a–4 d include contour intensity plots of chip modes having netgain in one implementation, note this figure shows the chip 110 in aridge-down orientation;

FIG. 5 show plots of net gain as a function of current density;

FIGS. 6 a–6 c include contour plots of higher-order modes that have verylow values of C_(m); and

FIG. 7 is a schematic block diagram of a semiconductor laser systemaccording to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This teaching of U.S. provisional patent application No. 60/263,683,filed Jan. 23, 2001, are hereby incorporated by this reference.

FIG. 1 shows an external cavity semiconductor laser system 100, whichhas been constructed according to the principles of the presentinvention.

Generally, the laser 100 comprises a semiconductor chip 110. This chiphas a stripe 112, such as a ridge waveguide, which has been etched orotherwise formed in the epitaxial layers of the bulk material of thechip 110. The stripe 112 defines the optical axis.

In one implementation, the chip utilizes a trench-defined ridge. Inalternative embodiments, the epitaxial layers on either lateral side ofthe ridge are entirely removed as in another common ridge configuration.In still other embodiments, stripes defined by regrowth or otherprocesses are used.

According to the invention, the chip 110 is configured to generate amode that is greater than 5 micrometers in diameter in both thetransverse and lateral directions. Note, the outside edge or perimeterof the mode is defined as the contour where the intensity is a valuethat is exp(−2)=13.5% of its maximum value. This large mode size yieldsa number of advantages.

First, the large mode size provides good coupling efficiency to singlemode fiber because the mode size of the chip is matched to the size ofthe mode in the fiber. That is, the cross-sectional area of the fibercore and the semiconductor waveguide are closely matched. Specifically,in one implementation, LEAF brand fiber by Corning Incorporated is used,which has a mode size of approximately 6 micrometers.

In the preferred embodiment, the chip has a tilted facet configuration.That is, the ridge centerline does not form a 90-degree angle with thefirst and/or second facets 114, 116 at the wafer planes, which typicallyformed by cleaving, etching or polishing the chip bulk.

A result of this tilted facet configuration is that it avoidsself-oscillation of the chip 110 itself. Any radiation reflected at theplane interfaces at the first and second facets 114, 116 is reflected atan angle relative to the optical axis defined by the ridge 112, thusavoiding self-oscillation.

A second advantage associated with the large mode size results from thecombination with the tilted facet—the angles required to avoidself-oscillation are much smaller. This yields further increases in thecoupling efficiency. Thus, according to the preferred embodiment, facetangles of less than 5 degrees are used. Specifically, in one embodiment,the angles are less than 4 degrees or approximately 3.5 degrees.

A back reflector system providing spatial mode filtering is provided atthe first facet 114 of the chip 110.

Preferably, a single mode fiber pigtail 120 is coupled to the facet 114.As common, in tilted facet coupling configurations, the fiber endface122 is polished or cleaved at an angle to prevent the creation of aparasitic laser cavity at the fiber endface interface. In the preferredembodiment, the angle is less than 10 degrees or about 8.5 degrees.

Adequate discrimination exists against higher order modes reflected froman angled facet, where the angle is about 3.5 degrees (corresponding toa glass fiber that is polished at an angle of about 8 degrees to buttcouple to the lowest order mode in the chip). Even for very high ordermodes, for 1 micrometer wavelength and a total mode width of 6micrometers, the analysis indicated that the highest possiblereflectivity occurred for a third order mode where it was about 0.00003.

In contrast, in order to get the same level of modal discrimination froman angled facet for modes that are only about 2.5 micrometers wide,angles of the facet relative to the waveguide of about 7 or 8 degreesare required. This translates to a very large angle in air of about 25to 30 degrees. These requirements together with reduced overallchip-fiber coupling efficiency practically rule-out using this techniquefor external cavity modal discrimination in conventional chip designs.

Generally, an angle of about 7 degrees is thought to be necessary toeliminate reflections, feedback at the semiconductor output facet. Therequired angle, however, is a function of the mode size. Snell's law,which makes the external angle a nonlinear function of the internalangle: sin(theta2)=(n1/n2)sin(theta1). This causes the external angle(in air) to more than double when the internal angle is doubled.

In the preferred embodiment, the fiber endface 122 is butt coupled ornear butt coupled (i.e., without intervening bulk optics) to the inputfacet.

With the present invention the endface can be separated from the inputfacet by up to 10 micrometers and still achieve acceptable couplingefficiencies because of the lower diffraction associated with the largemode.

In fact in some embodiments, an index matching filler is insertedbetween the fiber endface 122 and the first facet 114. In someimplementations, epoxies such as those used with Mach-Zender modulatorsare used. The large mode size generally avoids catastrophic opticaldamage (COD) at the facet because of the lower concomitant optical powerintensities.

It is also possible to use external bulk/micro optical components suchas lenses and mirrors of various types with or without fiber lenses.Although, except in laboratory tests, it is unlikely that bulkcomponents are desirable due to the resulting increase in devicemanufacturing cost.

The output facets 114, 116 of the semiconductor waveguide 110 arepreferably optically coated to have an antireflection (AR) coating thatis matched to the glass index of the fiber. This will work particularlywell if epoxy is used around and in the butt-coupled joint, where theepoxy can be chosen to have an index closely matched to the glass fiber.Alternatively, the AR coating on the facet is made to match air. Thenthe butt-coupled end of the fibers must also be AR coated to match air.This allows for the possibility that a small air gap, which can benecessary or desirable, as in the case of “near butt coupling” betweenthe semiconductor facet and the fiber, depending upon packagingtechniques used.

A distal end 210 of the pigtail 120 defines the back reflector of thelaser cavity. In the preferred embodiment, this distal end is coated tobe highly reflecting. In one implementation, the HR coating on fiber end210 is a dielectric, multi-layer mirror. Alternatively, a grating(s)internal to the fiber is used as the back reflector.

It is also possible to use external bulk optical components such aslenses and mirrors of various types, although, except in laboratorytests, it is unlikely that bulk components are desirable. Nevertheless,micro-optic components, as opposed to bulk components, might be usefuloptions.

The endface 124 of the output fiber 126 is coupled to the second facet116 preferably using the same or similar coupling strategy as describedrelative to the first facet 114. In the preferred embodiment, the buttcoupling, or near butt coupling, technique is used, with or withoutfiller. Specifically, the fiber is polished at the angle of less than 10degrees or about 8.5 degrees.

An output mirror reflector 152 is provided along the length of theoutput fiber 126. In the preferred embodiment, the reflector 152 is afiber Bragg grating providing less than 15% power reflectively. In oneimplementation, the grating provides relatively broadband reflection ofgreater than 0.8 nanometers bandwidth. This configuration is useful insome pump applications.

Alternatively, the grating has a narrow bandwidth of less than 100MegaHertz, for narrowband applications.

In the preferred embodiment, the laser system 100 functions as a highpower laser. Specifically, in the preferred embodiment, the chip lengthL is relatively long, i.e., that is greater than 1 centimeter to as longas 2.5 centimeters.

The residual power reflectivity at the semiconductor-fiber interface islabeled as r_(m), where the subscript m denotes the order of thesemiconductor wave-guide spatial mode, and more generally may includetwo integer subscripts that represent the number of lobes in thetransverse and lateral directions. C_(m) is the power-couplingcoefficient, which also depends upon the spatial mode m, and Γ_(b) andΓ_(f) are the “voltage” reflectivities at the ends of the externalcavity (as opposed to the power reflectivities R_(b)=|Γ_(b)|², andR_(f)=|Γ_(f)|²).

There is only one propagating mode in the fibers 120, 126; so there areno modal indices (m) for the reflectivities, Γ_(b) and Γ_(f), thesubscripts b and f simply indicate that these reflectivities may chosento have different values at the back and front facets, the output end ofthe cavity generally having a small reflectivity (we will choose this asΓ_(f)) and the other end having a reflectivity (Γ_(b)) preferablyapproaching unity.

FIG. 2 is a cross-sectional view of one embodiment of the chip 110 thatwill produce the large modes utilized in the present invention.

Specifically, in the preferred embodiment, a ridge waveguide stripesystem is used. Specifically, a ridge 112 is etched or otherwise formedin epitaxial layers 212.

The waveguide region is preferably n-type material to contain freecarrier absorption enabling a relatively long chip length.

The mode is not centered on the active region 214 in order to furtherdecrease free carrier absorption and reduce gain guiding. In fact, inthe preferred embodiment, less than 20%, preferably less than 8%, of thelowest order mode 216 overlaps with the active layer 214. This reducesgain but also keeps losses small, thereby avoiding the gain-guidingproblem.

According to the invention, the chip is configured for high gain, at theexpense of spatial mode control. Typically, in the preferred embodiment,the chip is, in fact, “over-moded”. Thus, if configured as a laser withreflecting end facets, it would generate higher order modal output inaddition to the TEM₀₀ mode.

The threshold condition for any mode m is that the cavity round-trip netgain be equal to unity. Although it will be shown later that the mode ofthe composite structure, which includes the semiconductor waveguide andthe external fiber cavities, is a superposition of several waveguidemodes (a so-called “supermode”), for the moment it is useful to ignorethis complication and assume that each spatial mode of the semiconductorwaveguide can be treated as a separate entity. In this case, thethreshold condition is expressed below in Eq. 2.1, where g_(m) is thenet gain coefficient for the mode m, i.e., g_(m)=γ_(m)−α_(m), with γ_(m)being the modal gain coefficient, α_(m) is the modal loss coefficient,and L is the gain length of the semiconductor. (For the large-mode-sizewaveguides, discussed here, the loss coefficient can vary significantlywith the mode m).exp(2g _(m) L)|Γ_(b)Γ_(f)|² C _(m) ⁴=1.  Eq. 2.1

In writing Eq. 2.1, the reflectivity r_(m) has been neglected since itis very small for all modes because of the large mode sizes and theangled facet. It is important that we know how small r_(m) is, becausethe higher-order modes of the waveguide often have larger gain than thelowest-order mode, and we have to eliminate the possibility that theymay reach threshold due to the residual feedback from r_(m). In otherwords, the feedback must be sufficiently small that the followinginequality is satisfied for any mode with net gain:exp(2g _(m) L)r _(m) ²<1.  Eq. 2.2

The solution of Eq. 2.1 for the threshold gain in the external cavity isg _(m)=1/L[ln(1/C _(m) ²)+ln(1/R _(b) R _(f))^(1/2)].  Eq. 2.3

The threshold gain in the internal cavity is from Eq. 2.2g _(m)=1/L[ln(1/r _(m)).  Eq. 2.4

Since R_(b) and R_(f) are not dependent on the waveguide mode, all ofthe modal discrimination must arise from the dependence of C_(m) on thespatial mode of the waveguide. Hence it is critical to establish whatthis dependence is. For this purpose we have modeled waveguides thathave the geometry of FIG. 2. Values for the dimensions labeled by W andH in that figure, which give good coupling for the lowest-order mode butpoor coupling for higher-order modes, are W˜H˜6 to 8 micrometers. Thevalue of B is typically about 1.5 to 2 micrometers and has little effecton the wave-guiding parameters. These typical dimensions, in general,provide good coupling of the lowest-order mode with the fiber mode. Thevalue of T has an important influence on the number of other modes thatcan propagate without net loss. It is also important in determining therelative gain of the various modes and can be chosen to give the bestcompromise available between all the parameters of interest. There is noobvious design procedure to determine the “best” values. Ratherwaveguide modeling (including gain and loss) must be carried out in asystematic fashion. The values of W, H, and T that have been used forthe model discussed in the following analysis for a 980-nm wavelengthlaser are (in micrometers): W=8, H=7.15, and T=5.28. In order to enhancethe gain in the lowest-order spatial mode, the layer of thickness, Δ=0.1micrometers, has been included in the wave guiding region on the p-typeside of the quantum-well region, as shown in FIG. 2. These values wereused for a structure in which the n-type cap region and the p-typebuffer region are composed of the alloy Al_(x)Ga_(1-x)As with x=0.3, andboth of the waveguide regions are composed of Al_(x)Ga_(1-x)As withx=0.18. These aluminum fractions correspond to index values at 980 nm ofn₁=3.405 and n₂=3.34.

Generally, the chip has low gain per unit length, to limit gain-guidingeffects (causing more competing spatial modes) as well as self-focusingeffects (causing beam distortions and instabilities at high powerdensity). Low gain (low confinement factor) enables very large modalvolumes without these problems. Also it is true that low gain is aresult of having large modal volume.

FIG. 3 shows the coupling of the lowest-order mode C₁₁ as a function ofthe fiber mode diameter. The largest value, 0.861, occurs for about a7-micrometer fiber mode diameter. Note that the subscript 11 indicatesone intensity lobe in the transverse direction and one intensity lobe inthe lateral direction. Depending on the implementation and codesign ofthe chip 110 and with fiber selection, the design dimensions areadjusted to achieve a maximum coupling efficiency of about 85% for anymode diameter from about 5.5 micrometers to about 9 micrometers.

FIGS. 4 a–4 d show modes having net gain, for the design parametersdiscussed above and near the modeled current density of 600 A/cm². Themode with indices 31 is also shown, although it has a small net loss at600 A/cm². This mode is particularly interesting and it is well confinedto the ridge region, having little coupling to the slab region. A modewith three intensity lobes in the transverse direction and one lobe inthe lateral direction is likely, by symmetry, to have relatively largecoupling to the fiber compared to other modes, except the lowest-ordermode. The coupling of mode C₃₁ is small for the case that we modeled,probably because it is not truly a mode with one intensity lobe in thelateral direction. There is a more complicated structure in theintensity pattern, as seen in FIGS. 4 a–4 d. We find that amongC₃₁=0.000135, C₂₁=0.0394, and C₅₁=0.00183, C₂₁ is surprising large andthis mode turns out to have the lowest threshold except for thelowest-order mode.

If the lowest-order mode reaches threshold before any of the other modesshow net gain, they are effectively prevented from oscillation, sincethe population inversion tends to become clamped above threshold nearits threshold value. Still it is important to have as large a separationbetween the threshold of the lowest-order mode and the others since theclamping of the population is never complete, due to various effects.

For estimates of the residual modal reflectivities r_(m) at the angledfacets, a simple lossless (gainless) analytic model having a high degreeof symmetry has been used. This model predicts that the residualreflectivity varies from about −60 dB for the lowest-order mode up to aslarge as −44 dB for some of the higher-order modes. These numbers aresimilar to those obtained for a few numerically calculated examples. Forthe present problem we use −60 dB for the lowest-order mode and −44 dBfor all the higher order modes. For a gain length L=1 cm, thecorresponding values of 1/L[ln(1/r_(m) ²)] is about 10.23 cm⁻¹ and13.821 cm⁻¹, respectively for −60 dB and −44 dB. In general, asuccessful design will require checking r_(m) and C_(m) for all themodes that show a positive net gain near the threshold for thelowest-order mode to be sure that the necessary values can bedemonstrated. Both of these quantities can be calculated by an overlapintegral of the calculated modes with themselves after reflection fromthe angled facet (for r_(m)) and by an overlap integral of calculatedmodes with the fiber mode (for C_(m)).

In order to more clearly demonstrate the suppression of higher-ordermodes, we have calculated the gain vs. current density for the modesshown in FIGS. 4 a–4 d. To do this we have used published values oftransparency current density and of gain versus current density perquantum well for 980-nm structures, which have quantum well regionssimilar to the ones we model. By comparing the relative opticalconfinement factors for the published results with those for the modesshown in FIGS. 4 a–4 d, it is possible to predict the curves shown inFIG. 5, assuming that the gain can be modeled as linear with currentdensity, i.e., g_(m)=Γ_(m)*g_(o)(J/J_(t)−1)−α_(m), where Γ_(m) is theoptical confinement factor, g_(o) is a constant, J is the currentdensity, and J_(t) is the transparency current density. Finally, thethresholds for the various modes are marked by the solid circles for theexternal cavity operation and by the open circles for the internalcavity operation. In this example the threshold for external cavityoperation of the lowest-order mode is lower than any other threshold byabout 370 A/cm².

Other modes can be found using the mode solving software, but only thosethat are reasonably tightly bound to the ridge region have potential forlow threshold operation. Some modes of this type are shown in FIGS. 6a–6 c. These higher-order modes have very low values of C_(m) and wouldnot oscillate in the external cavity. They also have low gain vs.current density and will not oscillate in the internal cavity, either.

FIG. 7 shows another embodiment of a laser system of the presentinvention.

The parameters of this embodiment are generally similar to thosedescribed previously in the design of the chip 110 of FIG. 1.

In this “one-ended” version, the first facet 114 is HR coated tofunction as a back reflector of the laser cavity. Preferably, the firstfacet forms a 90 degree angle with the laser stripe 112. In oneimplementation, the first facet is polished at the desired 90 degreeangle. In other embodiments, it is formed by etching, such as reactiveion etching (RIE), or a cleaving process.

The second facet 116 is tilted with respect to the stripe. Preferably,the angling is as described previously, i.e., a facet angle of less than5 degree is used, with angles of less than 4 degrees to approximately3.5 degrees being used in some embodiments. The single mode fiberpigtail 126 is coupled to the facet 116. Endface 124 is polished orcleaved at an angle to prevent the creation of a parasitic laser cavityat the fiber endface interface. In the preferred embodiment, the angleis less than 10 degrees or about 8.5 degrees.

The Bragg grating 152 functions as the output reflector of the laser.

The FIG. 7 embodiment, being one-ended, has advantages in ease ofpackaging. Generally, however, it is somewhat less robust with respectto multi spatial mode operation since a spatial mode filter is presentat only one end of the chip 110.

FIG. 7 is also used as the foundation for the following analysisconcerning any detrimental impact from supermodes on power tracking forexample.

In the figure, the coefficients Γ_(f) and Γ_(b) are voltagereflectivities rather than power reflectivities. For simplicity we canthink of a gain medium that supports only a few modes (say, three), butit does not matter how many modes may be present in general. Also we areconsidering the propagation of beams in an external cavity that includesa fiber at one end, only, of the gain medium. (Generally, the resultshere are similarly applicable to the double-ended version of FIG. 1.)

As a matter of definition, for each spatial mode (mode index m), we willhave a complex propagation constant γ_(m)=β_(m)+iα_(m)/2. We also assumethat the three hypothetical modes have amplitudes of A₁, A₂, and A₃ (ingeneral A_(m)). The amplitude of the mode in the fiber is A₀. Ifinitially the amplitudes incident from the gain medium onto the fiberare A_(m) ^(a), then A₀=Σ_(m)c_(m0)A_(m) ^(a), where c_(m0) is theoverlap of mode m with the fiber mode (in general a complex number).These amplitudes are shown schematically in the figure as an aid forthis discussion. The mode returning from the fiber back into the gainmedium has the amplitude Γ_(f)A₀, and excites the following amplitudesin the spatial modes of the gain medium:A _(m) ^(b)=Γ_(f) A ₀ c _(0m)=Γ_(f) c _(0m)Σ_(n) c _(n0) A _(n)^(a).  Eq. 3.1

As indicated in the figure, the superscript b labels the mode amplitudesthat are excited by the return signal from the external fiber cavity. Ifwe follow the modes as they propagate through the gain medium, reflectfrom the back facet, and return to the fiber interface, we can see thatthe effect is to multiply each mode by a factor ofΓ_(b) exp(i2γ_(n)L).  Eq. 3.2

Hence, the mode amplitudes that arrive back at the fiber interface(labeled by the superscript c) areA _(m) ^(c)=Γ_(b)Γ_(f) c _(0m)Σ_(n) exp(i2γ_(n) L)c _(n0) A _(n)^(a)  Eq. 3.3a=d _(m)Σ_(n) b _(n) A _(n) ^(a)  Eq. 3.3b

where we note in Eq. 3.3b that Γ_(b)Γ_(f)c_(0m)≡d_(m) is a complexconstant that depends only on the mode index m and thatexp(i2γ_(n)L)c_(n0)=b_(n) is also a complex constant that depends onlyon the mode index n. Now we note that from Eq. 3.3b,A _(m) ^(c) /d _(m)=Σ_(n) b _(n) A _(n) ^(a) =K,  Eq. 3.4

where K is a (complex) constant, independent of mode index, since it isa sum over all mode indices. Hence we can choose to set the initialamplitudes of the modes in the gain medium as follows:A _(m) ^(a) =d _(m) K=Γ_(b)Γ_(f) c _(0m) K.  Eq. 3.5

This choice will give us a “super” eigenmode of the system that resultsfrom the combination of the gain medium with the external cavity.Supermodes must result from the coupling of the original eigenmodes ofthe gain medium by the external cavity. The supermode we have foundconsists of the original spatial modes, with relative amplitudes andphases determined by c_(0m). This means that there will be no problemwith interference between the spatial modes as they couple into thefiber 126, since their relative amplitudes and phases are fixed by thecoupling of the fiber mode to each spatial mode, which is a constant toa high degree of approximation. This supermode also clearly can be madethe lowest threshold supermode, since it has power in each of thespatial modes that is proportional to the square of c_(0m). For thesituations we have analyzed, (c₀₁)² is more than 0.85 for the lowestspatial mode and only a few percent for any other spatial mode. We alsoknow that the lowest-order spatial mode can be chosen by waveguidedesign to have a large positive gain.

To investigate the threshold condition for this supermode, we cansubstitute Eq. 3.5 into the right-hand side of Eq. 3.3a and equate theresult to 3.3b. The following equation results:d _(m) K=d _(m) KΓ_(b)Γ_(f)Σ_(n) exp(i2γ_(n) L)c _(0n) c _(n0).  Eq. 3.6

Since c_(n0)=c_(0n)*, we obtain the threshold condition, after cancelingthe common factor on each side of the equation,Γ_(b)Γ_(f)Σ_(n) exp(i2Γ_(n) L)c _(n0) ²=1.  Eq. 3.7

In Γ_(f) we have absorbed the phase shift associated with round-trippropagation through the fiber to the reflector and any phase shiftassociated with reflection from a DBR grating or other reflectivecomponent that may be used for this reflector. If c_(n0) is zero for alln≠1, then Eq. 3.7 reduces to the familiar equation for threshold of alaser, except that the loss associated with the coupling efficiencybeing less than unity is included, viz.,exp(−α₁ L)=1/[Γ_(bΓ) _(f) c ₁₀ ²],  Eq. 3.8a

and2β₁ L=−Φ+2mπ,  Eq. 3.8b

where m is an integer, and Φ is the phase angle associated withΓ_(b)Γ_(f). The phase includes the round-trip propagation in the fiber,2β₀L₀, where L₀ is the length in the fiber with propagation constant β₀.Writing −α₁ as g₁ and defining Γ_(b)Γ_(f) as √R_(b)R_(f) yields the morefamiliar expression for Eq. 3.8a shown below.g ₁=1/L{ln[1/√R _(b) R _(f)]+ln[1/c ₁₀ ²]}.  Eq. 3.9

While this invention has been particularly shown and described withreferences to preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade therein without departing from the scope of the inventionencompassed by the appended claims.

1. A semiconductor optical system, comprising an edge-emitting,stripe-waveguide semiconductor chip having a first tilted facet andsecond tilted facet located at either end of the stripe, the chipgenerating a lowest order spatial mode that is greater than 5micrometers in diameter; a first waveguide having an endface positionedopposite the first tilted facet; and a second-waveguide having anendface positioned opposite the second tilted facet; wherein the firsttilted facet and the second tilted facet are angled relative to an axisof the stripe to prevent self oscillation of the semiconductor chip. 2.A semiconductor optical system as claimed in claim 1, wherein the firsttilted facet and the second tilted facet are angled relative to an axisof the stripe by less than 5 degrees.
 3. A semiconductor optical systemas claimed in claim 1, wherein the first tilted facet and the secondtilted facet are angled relative to an axis of the stripe by about than4 degrees.
 4. A semiconductor optical system as claimed in claim 1,wherein the first waveguide and the second waveguide are single modeoptical fiber.
 5. A semiconductor optical system as claimed in claim 1,wherein the first waveguide and the second waveguide function as spatialmode filters controlling the distribution of power among the multiplespatial modes of the semiconductor chip.
 6. A semiconductor opticalsystem as claimed in claim 1, wherein the endfaces of the firstwaveguide and the second waveguide are butt coupled to the first tiltedfacet and the second tilted facet, respectively.
 7. A semiconductoroptical system as claimed in claim 1, wherein a length of the stripe isgreater than 5 millimeters.
 8. A semiconductor optical system as claimedin claim 1, wherein a length of the stripe is greater than 10millimeters.
 9. A semiconductor optical system as claimed in claim 1,wherein a length of the stripe is greater than 20 millimeters.
 10. Asemiconductor optical system as claimed in claim 1, wherein lowest orderspatial mode that is greater than 6 micrometers in diameter.
 11. Asemiconductor optical system as claimed in claim 1, wherein lowest orderspatial mode that is greater than 9 micrometers in diameter.
 12. Asemiconductor optical system as claimed in claim 1, wherein first tiltedfacet and second tilted facet are anti-reflection coated.
 13. Asemiconductor optical system as claimed in claim 1, wherein theedge-emitting stripe waveguide semiconductor chip is overmoded.
 14. Asemiconductor optical system as claimed in claim 1, wherein the firstfiber pigtail includes a Bragg grating that functions as an outputmirror.
 15. A semiconductor optical system as claimed in claim 14,wherein the second waveguide includes a reflector functioning as a lasercavity back reflector.
 16. A semiconductor optical system, comprising anedge-emitting, stripe-waveguide semiconductor chip having a tilted frontfacet and a highly reflecting back facet, the chip generating a lowestorder spatial mode that is greater than 5 micrometers in diameter; anoutput mirror through which a laser output beam is coupled; and aspatial mode filter, between the output mirror and the front facet ofthe chip, that preferentially distributes the power into the large,lowest order mode of the semiconductor chip; wherein the tilted frontfacet is angled relative to an axis of the stripe to preventself-oscillation of the semiconductor chip.
 17. A semiconductor opticalsystem as claimed in claim 16, wherein the tilted front facet is angledrelative to an axis of the stripe by less than 4 degrees.
 18. Asemiconductor optical system as claimed in claim 16, wherein the spatialmode filter is a single mode optical fiber and the output mirror is afiber Bragg grating.
 19. A semiconductor optical system as claimed inclaim 16, wherein a length of the stripe is greater than 10 millimeters.